capable of 1.8v gate drive bv dss 20v simple drive requirement r ds(on) 90m surface mount package i d 2.5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 150 /w thermal data parameter storage temperature range total power dissipation 0.833 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.006 continuous drain current 3 , v gs @ 4.5v 2.0 pulsed drain current 1 10 gate-source voltage 8 continuous drain current 3 , v gs @ 4.5v 2.5 parameter rating drain-source voltage 20 AP2322GN g d s d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for commercial-industrial applications. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =1.6a - - 90 m v gs =2.5v, i d =1a - - 120 m v gs =1.8v, i d =0.3a - - 150 m v gs(th) gate threshold voltage v ds =v gs , i d =1ma 0.3 - 1 v g fs forward transconductance v ds =5v, i d =2a - 2 - s i dss drain-source leakage current v ds =20v, v gs =0v - - 1 ua i gss gate-source leakage v gs =8v - - 100 na q g total gate charge 2 i d =2.2a - 7 11 nc q gs gate-source charge v ds =16v - 0.7 - nc q gd gate-drain ("miller") charge v gs =4.5v - 2.5 - nc t d(on) turn-on delay time 2 v ds =10v - 6 - ns t r rise time i d =1a - 12 - ns t d(off) turn-off delay time r g =3.3 ? v gs =5v - 16 - ns t f fall time r d =10 -4- ns c iss input capacitance v gs =0v - 350 560 pf c oss output capacitance v ds =20v - 55 - pf c rss reverse transfer capacitance f=1.0mhz - 48 - pf r g gate resistance f=1.0mhz - 3.2 4.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =2a, v gs =0v, - 20 - ns q rr reverse recovery charge di/dt=100a/s - 13 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board , t < 10sec ; 360 : /w when mounted on min. copper pad. AP2322GN product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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